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Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice

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3 Author(s)
J. K. Sheu ; Opt. Sci. Centre, Nat. Central Univ., Chung-Li, Taiwan ; G. C. Chi ; M. J. Jou

Low-resistivity Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN strained-layer superlattices were grown. In these superlattices, the maximum hole concentration is 3/spl times/10/sup 18//cm/sup 3/ at room temperature. Hall-effect measurements indicate high conductivity of this structure in which the high activation efficiency is attributed to the strain-induced piezoelectric fields. This work also fabricated InGaN/GaN blue LEDs that consist of a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN SLs. Experimental results indicate that the LEDs can achieve a lower operation voltage of around 3 V, i.e., smaller than conventional devices which have an operation voltage of about 3.8 V.

Published in:

IEEE Electron Device Letters  (Volume:22 ,  Issue: 4 )