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RF W-band wafer-to-wafer transition

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2 Author(s)
Herrick, Katherine J. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Katehi, L.P.B.

Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:49 ,  Issue: 4 )

Date of Publication:

Apr 2001

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