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Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

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4 Author(s)
Walkey, D.J. ; Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada ; Smy, T.J. ; MacElwee, T.W. ; Maliepaard, M.

Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions are found to be within 5% of measurements for power levels to 3 mW/μm2 and over a 165°C substrate temperature range

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Semiconductor Thermal Measurement and Management, 2001. Seventeenth Annual IEEE Symposium

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