Cart (Loading....) | Create Account
Close category search window
 

The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Dezillie, B. ; Brookhaven Nat. Lab., Upton, NY, USA ; Li, Z. ; Eremin, V. ; Chen, W.
more authors

The radiation hardness for fast neutrons, high energy protons and 60Co gamma rays of planar detectors processed from highly oxygenated silicon detectors obtained by using high temperature (1200°C), long time (> 200 hours) oxidation technology, are compared with standard silicon detectors. For fast neutron irradiation it is found that there is no advantage of using highly oxygenated silicon FZ detectors as compared to the standard ones in terms of full depletion voltage degradation as measured a few days after radiation. For a gamma ray dose of 250 Mrad, the standard detectors of all resistivities (1 kΩcm to 5.6 kΩcm) invert the space charge sign, while there is little change in space charge density for oxygenated ones. For proton irradiation, the rate in full depletion voltage increase (β) is 2.3 times less than that fur neutron irradiation. The difference in radiation hardness is explained in terms of effect of radiation induced disorder regions (clusters of vacancies) on the introduction rates of divacancies in the oxygenated silicon

Published in:

Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 6 )

Date of Publication:

Dec 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.