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Low-noise back-illuminated AlxGa1-xN-based p-i-n solar-blind ultraviolet photodetectors

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9 Author(s)
Ting Li ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Lambert, D.J.H. ; Wong, M.M. ; Collins, C.J.
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We report the growth, fabrication and characterization of Al0.4Ga0.6N-Al0.6Ga0.4N back-illuminated, solar-blind p-i-n photodiodes. The peak responsivity of the photodiodes is 27 and 79 mA/W at λ≈280 nm for bias voltages of 0 V and -60 V, respectively, with a UV-to-visible rejection ratio of more than three decades (at 400 nm). These devices exhibit very low dark current densities (~5 nA/cm2 at -10 V). At low frequencies, the noise exhibits a 1/f-type behavior. The noise power density is S0≈5×10-25 A2/Hz at -12.7 V and the detectivity (D*) at 0 V is estimated to be in the range of 4×1011-5×1013 cm·Hz1/2 /W. Time-domain pulse response measurements in a front-illumination configuration indicate that the devices are RC-time limited and show a strong spatial dependence with respect to the position of the incident excitation, which is mainly due to the high resistivity of the p-type Al0.4Ga0.6 N layer

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 4 )

Date of Publication:

Apr 2001

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