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High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers

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2 Author(s)
Tansu, N. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Mawst, L.J.

This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (QW) active diode lasers on GaAs substrates, fabricated by low-temperature (550/spl deg/C) metal-organic chemical vapor deposition (MOCVD) growth. Strain compensation of the (compressively strained) InGaAs QW is investigated by using either InGaP (tensile-strained) cladding layer or GaAsP (tensile-strained) barrier layers. High-performance /spl lambda/=1.165 /spl mu/m laser emission is achieved from InGaAs-GaAsP strain-compensated QW laser structures, with threshold current densities of 65 A/cm/sup 2/ for 1500-/spl mu/m-cavity devices and transparency current densities of 50 A/cm/sup 2/. The use of GaAsP-barrier layers are also shown to significantly improve the internal quantum efficiency of the highly strained InGaAs-active laser structure. As a result, external differential quantum efficiencies of 56% are achieved for 500-/spl mu/m-cavity length diode lasers.

Published in:

Photonics Technology Letters, IEEE  (Volume:13 ,  Issue: 3 )

Date of Publication:

Mar 2001

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