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A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques

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3 Author(s)
Liu, S.C. ; Nat. Taiwan Univ., Taipei, Taiwan ; Wu, F.A. ; Kuo, J.B.

This paper reports a novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques. With two auxiliary pass transistors to dynamically control the bodies of transistors in the tag-compare portion of CAM cell, this SOI CAM cell has a fast tag-compare capability at a low supply voltage of 0.7 V as verified by the results from the two-dimensional semiconductor device simulation program MEDICI

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:36 ,  Issue: 4 )