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Stacked inductors and transformers in CMOS technology

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3 Author(s)
Zolfaghari, A. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Chan, A. ; Razavi, B.

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:36 ,  Issue: 4 )
RFIC Virtual Journal, IEEE

Date of Publication:

Apr 2001

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