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A CMOS programmable analog memory-cell array using floating-gate circuits

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5 Author(s)
Harrison, R.R. ; Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA ; Bragg, J.A. ; Hasler, P. ; Minch, B.A.
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The complexity of analog VLSI systems is often limited by the number of pins on a chip rather than by the die area. Currently, many analog parameters and biases are stored off-chip. Moving parameter storage on-chip could save pins and allow us to create complex programmable analog systems. In this paper, we present a design for an on-chip nonvolatile analog memory cell that can be configured in addressable arrays and programmed easily. We use floating-gate MOS transistors to store charge, and we use the processes of tunneling and hot-electron injection to program values. We have fabricated two versions of this design: one with an nFET injection mechanism and one with a pFET injection mechanism. With these designs, we achieve greater than 13-bit output precision with a 39-dB power-supply rejection ratio and no crosstalk between memory cells

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Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on  (Volume:48 ,  Issue: 1 )