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An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element

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4 Author(s)
G. I. Ayzenshtat ; Semicond. Devices Res. Inst., Sci. & Production State Enterprise, Tomsk, Russia ; A. V. Khan ; O. P. Tolbanov ; D. U. Mokeev

An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis

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Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of

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