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An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element

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4 Author(s)
Ayzenshtat, G.I. ; Semicond. Devices Res. Inst., Sci. & Production State Enterprise, Tomsk, Russia ; Khan, A.V. ; Tolbanov, O.P. ; Mokeev, D.U.

An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis

Published in:

Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of

Date of Conference:

2000

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