By Topic

A 50 GHz VCO in 0.25 /spl mu/m CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
HongMo Wang ; Bell Labs., Murray Hill, NJ, USA

Integrated VCOs with fundamental frequencies in the millimeter-wave (MM-wave) bands have thus far been realized mainly in III-V technologies and the designs are mostly waveguide or transmission-line based. As CMOS technology progresses to deep submicron, however, the possibilities of integrating next-generation broadband communication transceivers of high bit-rate on a single chip using this low-cost technology are investigated. In so doing, one of the first questions is that whether a quality signal source or, more preferably, a VCO can be designed in such a technology. This work demonstrates the feasibility of an LC-resonator based VCO in 0.25 μm CMOS for operation at 50 GHz consuming less power than its counterparts in other technologies while providing comparable phase noise and tuning performance. The technology used for the design is a 0.25 μm (minimum L/sub eff/=0.24 μm) 1-poly-5-metal digital CMOS with a modified substrate, which consists of a l0 Ωcm bulk topped with a p/sup +/ buried layer for latch-up suppression and an epi, and a thickened top metal.

Published in:

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Date of Conference:

7-7 Feb. 2001