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Millimeter-wave characteristics of SiGe heterojunction bipolar transistors and monolithic interconnects in silicon technologies

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4 Author(s)
J. Zhang ; Dept. of Electr. & Comput. Eng., Vancouver Univ., BC, Canada ; M. K. Jackson ; J. R. Long ; S. Sadr

Accurate measurements are needed to validate wideband active and passive models for silicon-based circuits aimed at millimeter-wave applications, such as 40GB/s datacomm and 26-28GHz (LMDS) broadband wireless systems. This wideband characterization of SiGe heterojunction bipolar transistors (HBTs) and interconnects uses a time-resolved, laser-based electro-optic sampling (EOS) technique and numerical de-embedding.

Published in:

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Date of Conference:

7-7 Feb. 2001