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A 126.6 mm/sup 2/ AND-type 512 Mb flash memory with 1.8 V power supply

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17 Author(s)
Ishii, T. ; Hitachi Ltd., Tokyo, Japan ; Oshima, K. ; Sato, H. ; Noda, S.
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A 512 Mb AND-type flash memory in 0.18 /spl mu/m CMOS achieves 126.6 mm/sup 2/ die size, uses a multilevel technique, and adapts to 1.8 V operation. In addition, a read-modify-write mode enables programming free from pre-programmed states.

Published in:

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Date of Conference:

7-7 Feb. 2001

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