Referenced Items are not available for this document.
In this paper, a modular approach for the L-band CMOS Active Inductor (AI) is proposed and designed based upon a connection in series of conventional low Q-factor gyrator-C basic cells. The Q-factor can then be tuned by the number of AI cells in order to offer simplicity in terms of pole/zero cancellation, while maintaining in each gyrator-C inductor cell low values of Q. In order to demonstrate the proposed architecture's usefulness, a prototype L-band active inductor is designed in a 0.6 μm CMOS process. The simulated results show that a high Q value of 972 is obtained at 2 GHz and an average Q-factor value of 200 is also achieved in the frequency range of 1-2 GHz
Published in:
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
(Volume:1
)
Date of Conference: 2000
- Page(s):
- 41 - 44 vol.1
- Meeting Date :
- 17 Dec 2000-20 Dec 2000
- Print ISBN:
- 0-7803-6542-9
- INSPEC Accession Number:
- 6931293
- Conference Location :
- Jounieh
- Digital Object Identifier :
- 10.1109/ICECS.2000.911480
- Product Type:
- Conference Publications
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