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A modular approach for high Q microwave CMOS active inductor design

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6 Author(s)
Chiang, K.H. ; Fac. of Sci. & Technol., Macau Univ., China ; Chiang, K.V. ; Lam, K.F. ; Choi, W.W.
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In this paper, a modular approach for the L-band CMOS Active Inductor (AI) is proposed and designed based upon a connection in series of conventional low Q-factor gyrator-C basic cells. The Q-factor can then be tuned by the number of AI cells in order to offer simplicity in terms of pole/zero cancellation, while maintaining in each gyrator-C inductor cell low values of Q. In order to demonstrate the proposed architecture's usefulness, a prototype L-band active inductor is designed in a 0.6 μm CMOS process. The simulated results show that a high Q value of 972 is obtained at 2 GHz and an average Q-factor value of 200 is also achieved in the frequency range of 1-2 GHz

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Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on  (Volume:1 )

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