Referenced Items are not available for this document.
The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrodinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, V/sub T/, variation with single-electron charging as a function of design parameters.
Published in:
Electron Device Letters, IEEE
(Volume:22
,
Issue:
3
)
Date of Publication: March 2001
- Page(s):
- 148 - 150
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6883856
- Digital Object Identifier :
- 10.1109/55.910625
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- March 2001
- Sponsored by :
- IEEE Electron Devices Society
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