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Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

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4 Author(s)
Hattendorf, M. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Scott, D. ; Yang, Q. ; Milton Feng

This letter presents a novel small-signal model extraction procedure which determines intrinsic and extrinsic base-collector capacitance (C/sub bci/ and C/sub bex/, respectively) directly from S-parameter data. The procedure utilizes physical assumptions shout the bias dependence of small-signal parameters. The model is validated on several InGaP/GaAs HBTs with different layouts, and the extraction results are discussed. The small-signal model is physical, produces excellent S-parameter fits, and may be used to derive a compact large-signal model.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 3 )