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Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact

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4 Author(s)
R. Zhu ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; M. C. Hargis ; J. M. Woodall ; M. R. Melloch

We, for the first time, designed and fabricated resonant-cavity light-emitting diodes for high-speed optical communications using a tunnel diode contact scheme. Use of a tunnel diode provides extra freedom in designing the device contact and cavity mirror, which allows the realization of a resonant cavity without requiring distributed Bragg reflectors. The fabricated resonant-cavity light-emitting diodes have half the spectrum bandwidth and nearly triple the fiber-coupled power of noncavity devices.

Published in:

IEEE Photonics Technology Letters  (Volume:13 ,  Issue: 2 )