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Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

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6 Author(s)
Asryan, Levon V. ; State Univ. of New York, Stony Brook, NY, USA ; Grundmann, Marius ; Ledentsov, N.N. ; Stier, O.
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The general relationship between the gain and spontaneous emission spectra of a quantum dot (QD) laser is shown to hold for an arbitrary number of radiative transitions and an arbitrary QD-size distribution. The effect of microscopic parameters (the degeneracy factor and the overlap integral for a transition) on the gain is discussed. We calculate the threshold current density and lasing wavelength as a function of losses. The conditions for a smooth or step-like change in the lasing wavelength are described. We have simulated the threshold characteristics of a laser based on self-assembled pyramidal InAs QDs in the GaAs matrix and obtained; a small overlap integral for transitions in the QDs and a large spontaneous radiative lifetime. These are shown to be a possible reason for the low single-layer modal gain, which limits lasing via the ground-state transition for short (several hundreds of micrometers) cavity lengths

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 3 )

Date of Publication:

Mar 2001

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