By Topic

Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Asryan, Levon V. ; State Univ. of New York, Stony Brook, NY, USA ; Grundmann, Marius ; Ledentsov, N.N. ; Stier, O.
more authors

The general relationship between the gain and spontaneous emission spectra of a quantum dot (QD) laser is shown to hold for an arbitrary number of radiative transitions and an arbitrary QD-size distribution. The effect of microscopic parameters (the degeneracy factor and the overlap integral for a transition) on the gain is discussed. We calculate the threshold current density and lasing wavelength as a function of losses. The conditions for a smooth or step-like change in the lasing wavelength are described. We have simulated the threshold characteristics of a laser based on self-assembled pyramidal InAs QDs in the GaAs matrix and obtained; a small overlap integral for transitions in the QDs and a large spontaneous radiative lifetime. These are shown to be a possible reason for the low single-layer modal gain, which limits lasing via the ground-state transition for short (several hundreds of micrometers) cavity lengths

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 3 )