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Selective preparation of single-phase boron-rich silicon borides films by pulsed Nd:YAG laser ablation method

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2 Author(s)
Suzuki, K. ; Dept. of Electr. Eng., Nihon Univ., Tokyo, Japan ; Nakata, J.

Summary form only. We report a successful selective preparation of single-phase boron-rich silicon boride (SiB) films for thermo-electric energy conversion device by pulsed Nd:YAG laser ablation method. In this process, SiB films on silicon substrate were produced by a pulsed laser ablation method in 10 mtorr argon gas. X-ray diffraction patterns and electron probe micro analyzer (EPMA) analysis of deposited films show single-phase composition.

Published in:

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Date of Conference:

10-15 Sept. 2000