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Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates

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5 Author(s)
Yablonovitch, E. ; Bellcore Navesink Res. Center, Red Bank, NJ, USA ; Kapon, E. ; Gmitter, T.J. ; Yun, C.P.
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The epitaxial liftoff approach has been attracting increasing interest as an alternative to lattice-mismatched heteroepitaxy. A thin-film GaAs double heterostructure injection diode laser fabricated on a glass substrate by the epitaxial liftoff technique is reported. This presages the integration of the two major optical communication materials, III-V semiconductor crystals with SiO/sub 2/ glass.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:1 ,  Issue: 2 )

Date of Publication:

Feb. 1989

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