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Terabit/s parallel optical connections to silicon CMOS chips: lessons learned from the SPOEC technology demonstrator

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1 Author(s)
Walker, A.C. ; Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK

Summary form only given. We have assembled the components of an optoelectronic 16 Gbit/s crossbar switch designed to include, internally, an optical data rate to a hybrid InGaAs/silicon chip in the Tbit/s regime. Input to the demonstrator is by an 8 x 8 VCSEL array operating at 250 Mbit/s/channel. These 64 channels are fanned out 8 x 8 times, using diffractive optics, to give the high overall data rate (Tbit/s) onto the hybrid switching chip. This chip includes an array of 4096 InGaAs-based p-i-n detectors solder-bump bonded to silicon CMOS.

Published in:
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Date of Conference: 10-15 Sept. 2000

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