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Microwave characteristics of high-speed traveling-wave electrooptic modulators on III-V semiconductors

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3 Author(s)
K. Wu ; Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada ; C. E. Tong ; R. Vahldieck

Microwave characteristics of III-V semiconductor traveling wave electrooptic modulators were studied rigorously by using the method of lines. This approach makes it possible to construct a complete computer model of double-rib, multilayer strip waveguide modulators which are out of reach of the classical methods. Both p-i-n junction and Schottky-barrier junction controlled devices have been investigated. The fringing microwave field has been found to play an important role in improving the modulator bandwidth. For the first time, a nonperfect electrode of finite thickness has been modeled. The method of lines algorithm has proved to be a valuable CAD tool for design and optimization of high-speed modulators

Published in:

Journal of Lightwave Technology  (Volume:9 ,  Issue: 10 )