Cart (Loading....) | Create Account
Close category search window
 

Fabrication and characterization of CoZrGd Hall sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wei Ye ; Dept. of Mater. Sci. & Eng., State Univ. of New York, Stony Brook, NY, USA ; Scala, P. ; Ko-Wei Lin ; Gambino, R.J.

Thin films of the amorphous ternary alloy CoZrGd are deposited by single target magnetron RF sputtering. The Hall effect was studied as a function of Gd percentage. The amorphous films show unusually large spontaneous Hall effect, whose sign is strongly dependent on the film composition, as explained by the model of McGuire et al. Also, the films display perpendicular easy axis anisotropy, which significantly reduces the field needed to obtain technical saturation of the spontaneous Hall effect. Thus the sensitivity of the films can be substantially increased. The highest magnetic field sensitivity (-14.8%/Tesla) is accomplished with Hall angle (ρH/ρ) of -2.07% at a saturation field of 0.14 Tesla. This film has potential application in small fields

Published in:

Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )

Date of Publication:

Sep 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.