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Sensitive asymmetrical MI effect in crossed anisotropy sputtered films

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5 Author(s)
Ueno, K. ; Stanley Electr. Co. R&D, Yokohama, Japan ; Hiramoto, H. ; Mohri, K. ; Uchiyama, T.
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This paper reports experimental results to obtain a sensitive and asymmetrical MI effect in crossed anisotropy sputtered films magnetized with a DC-biased AC or pulse current. The sensitive and asymmetrical MI effect occurs, because the crossed anisotropy films induce spiral magnetic anisotropy. The crossed anisotropy film (Co72Fe8B20) was made on a glass substrate using DC sputtering with two layers having 4.5 μm thickness each applying a DC field of 21 kA/m along with a designed anisotropy direction. A linear MI characteristic with a field detection sensitivity of 0.15%/(A/m) (12%/Oe) was obtained, which realizes a sensitive linear field sensor without any DC bias field

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Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )