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Increase of coercivity and squareness ratio of by ferrite thin films by adding SiO2 and substituting Al for Fe

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5 Author(s)
Feng, J. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Funabashi, N. ; Matsushita, N. ; Nakagawa, S.
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Simple Ba ferrite (BaM) and SiO2-added BaM (BaM:SiO2) and Al substituted BaM (Al-BaM) films were deposited using the facing targets sputtering apparatus on SiOx /Si wafers with Pt seed layers to enhance the c-axis orientation perpendicular to the film plane. Magnetic characteristics of the three kinds of BaM films were investigated and compared. Perpendicular coercivity Hc⊥ and squareness ratio S of BaM:SiO2 films increased to 4.2 kOe and 0.83, respectively, Hc⊥ and S of Al-BaM films increased to 3.2 kOe and 0.89, but saturation magnetization Ms decreased to 2.9 kc. The magnetization reversal mechanism of BaM:SiO2 and BaM films is not in coherent rotation mode but seems to be in the curling mode. The reason for high Hc⊥ of BaM:SiO2 films is different from that of Al-BaM ones

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Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )