By Topic

Induced uniaxial magnetic anisotropy field in very thin NiFe and CoZrNb films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Katada, H. ; Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan ; Shimatsu, T. ; Watanabe, I. ; Muraoka, H.
more authors

The induced uniaxial anisotropy field in thin permalloy and CoZrNb films was investigated. The value of the induced anisotropy field Hk of permalloy films of 77-81 at%Ni concentration was found to decrease as the film thickness decreased below 20 nm, even after annealing procedure in a magnetic field. The value of Hk at 3 nm was found to be nearly half that at 20 nm. A series of CoZrNb amorphous films showed a qualitatively similar thickness dependence of N k. Moreover, a similar reduction of Hk was observed at 77 K. On the other hand, the easy axis of Ni79Fe 21 films thinner than 20 nm was switched to the field direction by annealing with a magnetic field perpendicular to the easy axis of the as-deposited films, even at a low annealing temperature of 160°C. The absolute value of Hk in the 3 nm film after annealing at 160°C was nearly as large as in the as-deposited film. It is likely that the rearrangement of atom pairs can easily occur in the surface region, resulting in the switching of the easy axis to the annealing field direction in very thin films

Published in:

Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )