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Effects of deposition process parameters on exchange coupling of α-Fe2O3/NiFe bi-layers and GMR of α-Fe 2O3/NiFe/Cu/NiFe spin valves

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4 Author(s)
Bae, Seongtae ; Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA ; Egelhoff, W.F. ; Chen, P.J. ; Judy, J.H.

Effects of deposition process parameters on the exchange coupling of α-Fe2O3/NiFe bi-layers and GMR characteristics of α-Fe2O3/NiFe/Cu/NiFe spin-valves using optimized anti-ferromagnetic α-Fe2O 3 layer have been investigated. The exchange bias field was increased in α-Fe2O3(50 nm)/NiFe (7 nm) bi-layers by increasing oxygen partial pressure to 14.7%, substrate bias to 125 V, and input sputtering power up to 800 W of RF reactively sputtered α-Fe2O3 films. The thickness of NiFe and α-Fe2O3 layers also had an influence on the exchange coupling characteristics. By decreasing NiFe thickness from 35 nm to 5 nm and increasing α-Fe2O3 thickness from 550 nm, the exchange bias field dramatically increased up to 62.5 Oe. However, in the α-Fe2O3 thickness range of 50-100 nm, the exchange bias field decreased from 62.5 to 21.5 Oe. The GMR performance of as-deposited Si/α-Fe2O3(50 nm)/NiFe(3.25 nm)/Cu(2 nm)/NiFe(3.25 nm)/Au (5.4 nm) spin valve structures was characterized. The CMR ratio and MR sensitivity was 5.2% and 0.6%/0e, respectively

Published in:

Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )

Date of Publication:

Sep 2000

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