By Topic

The novel use of a memory layer in a giant magnetoresistive position sensor design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
N. T. Holliday ; Dept. of Comput. Sci., Manchester Univ., UK ; E. W. Hill

A linear noncontact position sensor using Co/Cu giant magneto-resistance (GMR) multilayers as the sensing material and incorporating a magnetic memory layer has been designed and modeled. A magnetic head assembly acts as the position locator and the presence of a memory layer makes the throw length unlimited. A numerical model using charge sheets and finite elements has been used to optimize the physical dimensions of the magnetic layers for different magnetic materials and determine their spacing from the Co/Cu GMR sensing material. The output from the sensor has been simulated as the head moves back and forth along the track. These results show that hysteresis in the memory layer can be overcome by optimizing the head design. Using easily available materials, the modeling has shown that a device using second anti-ferromagnetic (AF) peak Co/Cu is realizable. The model has also be used to identify desirable material parameters for potential future engineered materials with the aim of utilizing high GMR first AF peak Co/Cu material in the sensor

Published in:

IEEE Transactions on Magnetics  (Volume:36 ,  Issue: 5 )