Cart (Loading....) | Create Account
Close category search window
 

Enhanced GMR in PtMn-based spin valves with specular reflective thin oxide layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sakakima, H. ; Adv. technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Kyoto ; Satomi, M. ; Kawawake, Y. ; Adachi, H.

PtMn based Spin-valves with or without specular reflective thin oxide layers, OL, were prepared by sputtering. The MR ratios and ΔRs of the spin-valves without OL were about 8% and 1.2 Ω. The values were increased up to 12-15% and ⊇2.6 Ω by inserting an OL into the pinned and free layers. PtMn based spin-valves with synthetic AF and OL as the pinning layers were also studied. The MR ratio and ΔRs were about 11% and 2.9 Ω. These PtMn based spin-valves showed better thermal stability than IrMn based spin-valves

Published in:

Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )

Date of Publication:

Sep 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.