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Enhanced GMR in PtMn-based spin valves with specular reflective thin oxide layers

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4 Author(s)
Sakakima, H. ; Adv. technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Kyoto ; Satomi, M. ; Kawawake, Y. ; Adachi, H.

PtMn based Spin-valves with or without specular reflective thin oxide layers, OL, were prepared by sputtering. The MR ratios and ΔRs of the spin-valves without OL were about 8% and 1.2 Ω. The values were increased up to 12-15% and ⊇2.6 Ω by inserting an OL into the pinned and free layers. PtMn based spin-valves with synthetic AF and OL as the pinning layers were also studied. The MR ratio and ΔRs were about 11% and 2.9 Ω. These PtMn based spin-valves showed better thermal stability than IrMn based spin-valves

Published in:

Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )

Date of Publication:

Sep 2000

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