By Topic

Optical and electrical properties of bandgap shifted 1.55-μm laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
E. S. Koteles ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; J. J. He ; P. J. Poole ; M. Davies
more authors

Summary form only given. In this paper we report on optical and electrical properties of 1.55-μm InGaAsP-InP QW waveguide laser diodes blue-shifted using high-energy ion implantation and rapid thermal annealing. We demonstrate that, after shifting, waveguide losses are not increased and there is no significant change in the electrical properties of electroabsorptive modulators and laser diodes. Thus, this is a very attractive technique for achieving inexpensive and reliable photonic-integrated circuits (PIG).

Published in:

Optical Fiber Communications, 1996. OFC '96

Date of Conference:

25 Feb.-1 March 1996