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Summary form only given. In this paper we report on optical and electrical properties of 1.55-μm InGaAsP-InP QW waveguide laser diodes blue-shifted using high-energy ion implantation and rapid thermal annealing. We demonstrate that, after shifting, waveguide losses are not increased and there is no significant change in the electrical properties of electroabsorptive modulators and laser diodes. Thus, this is a very attractive technique for achieving inexpensive and reliable photonic-integrated circuits (PIG).