By Topic

Textured and smooth AlN films prepared by Helicon sputtering system [for SAW device applications]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wu, C.H. ; Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung Li, Taiwan ; Chiu, W.Y. ; Kao, H.L.

Highly-textured AlN films were obtained by using a Helicon sputtering system. This sputtering method was able to sustain the plasma in a gas atmosphere of 10-4 Torr, and, in turn, to improve the surface morphology of the film. The AlN film exhibits an extremely smooth surface with a root mean square roughness of only 3.7 Å

Published in:

Electronics Letters  (Volume:37 ,  Issue: 4 )