Referenced Items are not available for this document.
Highly-textured AlN films were obtained by using a Helicon sputtering system. This sputtering method was able to sustain the plasma in a gas atmosphere of 10-4 Torr, and, in turn, to improve the surface morphology of the film. The AlN film exhibits an extremely smooth surface with a root mean square roughness of only 3.7 Å
Published in:
Electronics Letters
(Volume:37
,
Issue:
4
)
Date of Publication: 15 Feb 2001
- Page(s):
- 253 - 255
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6868910
- Digital Object Identifier :
- 10.1049/el:20010124
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 15 Feb 2001
- Sponsored by :
- Institution of Engineering and Technology
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