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Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

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3 Author(s)
Mochizuki, K. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Oka, T. ; Ohbu, I.

The collector-emitter offset voltage of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors (C-up TC-HBTs) was found to be almost zero (10-14 mV) and independent of transistor size and temperature. These findings indicate that GaInP/GaAs C-up TC-HBTs are strong candidates For high-efficiency high-power amplifiers

Published in:

Electronics Letters  (Volume:37 ,  Issue: 4 )