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Summary form only given. Single photon detectors find a diverse range of applications for measurement of very weak optical signals at the shot noise limit. Future applications such as quantum cryptography and computing also require devices for detection of single photons. Conventionally single photons are detected by multiplying a photo-generated electron using an avalanche process, either in a vacuum photomultiplier tube (PMT), or, in the case of the semiconductor avalanche photodiode (APD), a reverse biased p-n junction. We propose and demonstrate a novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes.