By Topic

Single-photon detection using a quantum dot field effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Shields, A.J. ; Cambridge Res. Lab., Toshiba Res. Europe Ltd., Cambridge, UK ; O'Sullivan, M.P. ; Farrer, J. ; Hogg, R.A.
more authors

Summary form only given. Single photon detectors find a diverse range of applications for measurement of very weak optical signals at the shot noise limit. Future applications such as quantum cryptography and computing also require devices for detection of single photons. Conventionally single photons are detected by multiplying a photo-generated electron using an avalanche process, either in a vacuum photomultiplier tube (PMT), or, in the case of the semiconductor avalanche photodiode (APD), a reverse biased p-n junction. We propose and demonstrate a novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes.

Published in:

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Date of Conference:

7-12 May 2000