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Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers

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5 Author(s)
Coldren, C.W. ; Solid State & Photonics Lab., Stanford Univ., CA, USA ; Larson, M.C. ; Spruytte, S.G. ; Garrett, H.E.
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Summary form only given.GaAs-based vertical cavity surface emitting laser (VCSEL) diodes are becoming increasingly important in transmitters. By using GaInNAs MQW active regions, the emission wavelength of GaAs-based lasers can be extended into the range of 1200-1300 nm. In addition, the reduced temperature sensitivity of this active region allows for the possibility of uncooled transmitter operation.

Published in:

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Date of Conference:

7-12 May 2000