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Summary form only given.We have fabricated both bandstop and bandpass filters using flat scatterers for infrared wavelengths, and have used an FDTD simulation to accurately model the filter performance. The bandstop filter consists of three layers of circular metal scatterers (1.9 /spl mu/m diameter) in triangular planar arrays (3.2 /spl mu/m nearest neighbor spacing) with 2.6 /spl mu/m of planarizing polymer dielectric (n=1.45) between layers, and 1.3 /spl mu/m of dielectric on each end. The bandpass filter consists of three square-shaped inductive meshes, of period 4.2 /spl mu/m with 2.7 /spl mu/m square apertures, in the same dielectric layers. Both filters were fabricated using standard contact photolithography on a Si substrate. The level of agreement obtained for the main stopband (bandstop filter) and for the long wavelength cutoff (bandpass filter) is shown.