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Room-temperature cw operation of GaInAsSb/AlGaAsSb quantum well diode lasers emitting beyond 2 /spl mu/m

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7 Author(s)
C. Mermelstein ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany ; S. Simanowski ; M. Mayer ; R. Kiefer
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Summary form only given. We have demonstrated room-temperature CW operation of large optical cavity GaInAsSb-AlGaAsSb type-I QW lasers emitting at 2.25 /spl mu/m, lasing up to at least 320 K. A maximum current efficiency of 0.16 W/A and power efficiency of 17% has been achieved.

Published in:

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Date of Conference:

7-12 May 2000