Referenced Items are not available for this document.
A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.
Published in:
Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
Date of Conference: 25-25 Jan. 2001
- Page(s):
- 60 - 63
- Meeting Date :
- 21 Jan 2001-25 Jan 2001
- ISSN :
- 1084-6999
- Print ISBN:
- 0-7803-5998-4
- INSPEC Accession Number:
- 6905729
- Conference Location :
- Interlaken, Switzerland
- Digital Object Identifier :
- 10.1109/MEMSYS.2001.906478
- Product Type:
- Conference Publications
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