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Comparison of GaN p-i-n and Schottky rectifier performance

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9 Author(s)
Zhan, A.P. ; Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA ; Dang, G.T. ; Fan Ren ; Hyun Cho
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The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (~5 V for the p-i-n diodes; ~3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34±0.05 V·K-1

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 3 )

Date of Publication:

Mar 2001

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