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Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication

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5 Author(s)
Mohammadi, S. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Jae-Woo Park ; Pavlidis, D. ; Guyaux, J.-L.
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The design methodology, processing technology, and characterization of high-gain GaInP/GaAs heterojunction-bipolar-transistor-based distributed amplifiers are described in this paper. Distributed amplifiers with different active cells and number of stages have been compared for high-gain (>12 dB) and high-bandwidth (>25 GHz) performance. Based on the results, a three-stage attenuation-compensated distributed amplifier with a flat gain (S21) of 12.7 dB over a bandwidth of 27.5 GHz was successfully fabricated and tested. Eye-diagram tests at 10 Gb/s show very open eye characteristics with no signal skewing. The amplifier achieves a minimum noise figure of 4 dB at 3 GHz and a sensitivity of -25 dBm for 10-Gb/s nonreturn-to-zero 215-1 pseudorandom bit sequence with a bit error rate of 10-9

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 6 )