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A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

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10 Author(s)
Washio, K. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Ohue, E. ; Shimamoto, H. ; Oda, K.
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A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT)/CMOS technology with high-quality passive elements, made by using SOI on a high-resistivity substrate (SOI/HRS), was developed. The SiGe HBTs exhibited high-frequency, high-speed capability with f/sub max/ of 180 GHz and a fast ECL-gate delay of 6.7 ps.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000