By Topic

High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

A high-photosensitivity and no-cross-talk pixel technology has been developed for an embedded active-pixel CMOS image sensor using a 0.35-/spl mu/m CMOS logic process. To increase photosensitivity, we developed a deep low-concentration p-well (deep p-well) photodiode. To suppress pixel cross-talk caused by obliquely incident light, a double-metal photoshield was used. The cross-talk caused by electron diffusion in the substrate was suppressed by using the deep p-well photodiode. A 1/3-inch 330 k-pixel active-pixel CMOS image sensor was fabricated using this technology. A sensitivity improvement of 110% for 550-nm incident light was obtained.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000