Cart (Loading....) | Create Account
Close category search window
 

High temperature operated (/spl sim/250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shiang-Feng Tang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Shih-Yen Lin ; Si-Chen Lee ; Chieh Hsiung Kuan
more authors

The 10 stacked self-assembled InAs/GaAs quantum dot infrared photodetector (QDIP) operated in 2.5 to 7 /spl mu/m range by photovoltaic (PV) and photoconductive (PC) mixed-mode near room temperature (/spl sim/250 K) was demonstrated. The specific peak detectivity D* is 2.4/spl times/10/sup 8/ cm-Hz/sup 1/2//W at 250 K. The confining Al/sub x/Ga/sub 1-x/As barrier layers on both sides of stacked QD structure are the key to the high temperature operation.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.