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Low operation voltage high integrated field emitter arrays by transfer metal mold technique using ultra precision machining and super microelectroplating technology

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5 Author(s)
Nakamoto, M. ; Corp. R&D Center, Toshiba Corp., Kawasaki, Japan ; Fukuda, K. ; Inoue, A. ; Takahashi, F.
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Extremely sharp, uniform, low operation voltage and high integrated field emitter arrays (FEAs) have been developed by the transfer metal mold emitter fabrication technique using ultra precision machining and super microelectroplating technology to realize highly efficient and reliable vacuum microelectronic devices, especially, vacuum microelectronic power switching devices. Transfer Ni FEAs using Cu Master FEAs and Transfer Ni FEA using Ni Master FEA, having high emitter density of 8 million tips/cm/sup 2/, containing 1.31 billion emitter tips, one of the highest values reported in the world to date, have demonstrated the lowest turn-on voltage value of 9.5 V//spl mu/m, 14.9 V//spl mu/m, respectively. Because of the superior transfer characteristics and the cutting precision by microelectroplating and ultra precision machining, the emitter tip radii of Cu Master FEAs, Ni Master FEAs, and their Transfer Metal Mold Ni FEAs, are as small as 10 nm.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000