Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

This paper reports on the realization of highly reliable deuterated oxide by deuterium pyrogenic oxidation and poly-Si deposition using deuterated monosilane gas (SiD/sub 4/). The properties of these deuterated oxides are compared with those of deuterium-annealed oxide. It is concluded that the improvement of the gate oxide reliability by a deuterium incorporation is dependent on the method whereby deuterium is incorporated into gate oxide film and that deuterium atoms, which are incorporated into both Si/SiO/sub 2/ interface and bulk-SiO/sub 2/ by the oxidation and poly-Si deposition, play an important role in the suppression of electron trap creation under Fowler-Nordheim (F-N) stress.