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Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

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4 Author(s)
Mitani, Y. ; Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan ; Satake, H. ; Itoh, H. ; Toriumi, A.

This paper reports on the realization of highly reliable deuterated oxide by deuterium pyrogenic oxidation and poly-Si deposition using deuterated monosilane gas (SiD/sub 4/). The properties of these deuterated oxides are compared with those of deuterium-annealed oxide. It is concluded that the improvement of the gate oxide reliability by a deuterium incorporation is dependent on the method whereby deuterium is incorporated into gate oxide film and that deuterium atoms, which are incorporated into both Si/SiO/sub 2/ interface and bulk-SiO/sub 2/ by the oxidation and poly-Si deposition, play an important role in the suppression of electron trap creation under Fowler-Nordheim (F-N) stress.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000