Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Process design methodology for via-shape-controlled, copper dual-damascene interconnects in low-k organic film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Kinoshita, K. ; Syst. Devices & Fundamental Res., NEC Corp., Sagamihara, Japan ; Tada, M. ; Usami, T. ; Hiroi, M.
more authors

By dual hard mask (dHM) process combined with sidewall-hardening etching step, copper dual-damascene (DD) interconnects are fabricated in low-k organic film without any etch-stop layers under the trench. Careful designs of dHM structures and their patterning sequence enable us to harden the via-sidewall by fluorocarbon plasma, which is a key to reduce final via-shoulder loss at the via/trench connecting region. The low-k structure has low via resistance such as 0.65 /spl Omega//0.28 /spl mu/m/sup /spl phi//-via while keeping the large tolerance of misalignment in via/trench, appreciable for 0.1 /spl mu/m-generation CMOS ULSIs.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000