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Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications

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23 Author(s)
Manchanda, L. ; Lucent Technol. Bell Labs., Murray Hill, NJ, USA ; Green, M.L. ; van Dover, R.B. ; Morris, M.D.
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We have investigated a new class of high K gate dielectric materials, Si-doped aluminates. These dielectrics, with TiN gates, can withstand high temperature CMOS processing and therefore do not require replacement gate technology. In this paper we focus on Si-doped zirconium aluminate (Zr-Al-Si-O), with K/spl sim/20. With the TiN gate stack subjected to the standard CMOS thermal budget, we have scaled this dielectric to t/sub eq//spl sim/1.2 nm with leakage current <50 mA/cm/sup 2/ and gate power budget <50 mW/cm/sup 2/, at IV. For high performance, low power CMOS, beyond SiO/sub 2/, doped-aluminum oxide (with K/spl sim/10) may be a viable alternate gate dielectric. Beyond aluminum oxide, aluminates (with K>15) may be viable alternate gate dielectrics.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000

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