By Topic

Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yamaguchi, T. ; Lab. of Adv. LSI Technol., Toshiba Corp., Yokohama, Japan ; Satake, H. ; Fukushima, N. ; Toriumi, A.

On the basis of the experimental results of XPS analysis and the carrier separation, the band diagram and carrier transport mechanism in ZrO/sub 2/ dielectrics were clarified for the first time. ZrO/sub 2/-MIS structure consists of ZrO/sub 2/ layer and the interfacial Zr-silicate layer. The carrier conduction in ZrO/sub 2/ layer is dominant in the ZrO/sub 2//Zr-silicate/Si MIS structure. It was found that the hole conduction mechanism is different from electron conduction mechanism in ZrO/sub 2/ gate dielectrics.

Published in:

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Date of Conference:

10-13 Dec. 2000