By Topic

Measurement of Young's modulus of nickel silicide film by a surface profiler

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ming Qin ; Microelectron. Center, Southeast Univ., Nanjing, China ; Yuen, C.Y. ; Poon, M.C. ; Chan, W.Y.

Young's modulus of NiSi film formed on crystal silicon is determined by measuring the deflection of the film as a function of the loaded force on the center of it. In order to reduce the error caused by unknown Poisson's ratio and the boundary of the structure, Si3N4 film with a Young's modulus of 370 Gpa is used as a reference. The results show that NiSi formed at 350°C has a Young's modulus of 132 GPa, which is lower than that that of normal grown polysilicon (~160 Gpa) and Si3N4. It means that the NiSi is a promising structure material for MEMS application

Published in:

Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong

Date of Conference: