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Comparison of total dose effects on a voltage reference fabricated on bonded-wafer and polysilicon dielectric isolation

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8 Author(s)
Krieg, J.F. ; NAVSEA Surface Warfare Center Div., Crane, IN, USA ; Neerman, C.J. ; Savage, M.W. ; Titus, J.L.
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Voltage reference devices, fabricated with two different starting materials, were used as a test vehicle to compare the total dose response of polysilicon dielectric-isolation (Poly-DI) and bonded-wafer versions of a Radiation Hard Silicon Gate (RSG) BiCMOS process. Parts were exposed at 50, 10 and 0.08 rd(Si)/s

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 6 )