Comparison of total dose effects on a voltage reference fabricated on bonded-wafer and polysilicon dielectric isolation

Voltage reference devices, fabricated with two different starting materials, were used as a test vehicle to compare the total dose response of polysilicon dielectric-isolation (Poly-DI) and bonded-wafer versions of a Radiation Hard Silicon Gate (RSG) BiCMOS process. Parts were exposed at 50, 10 and 0.08 rd(Si)/s.